bss8402dw complimentary pair enhancement mode mosfets 1 2 3 4 5 6 1 2 3 4 5 6 features applications switching power supplies hand-held computers, pdas maximum ratings - total device rating symbol value units this space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode mosfets (one n-channel and one p-channel). it comes in a very small sot-363 (sc70-6l) package. this device is ideal for portable applications where board space is at a premium. total power dissipation (note 1) operating junction and storage temperature range 9/15/2005 page 1 www.panjit.com 200 mw c -55 to +150 p t, t d stg t = 25c unless otherwise noted j j sot- 363 123 654 note 1. fr-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout maximum ratings n - channel - q , 2n7002 rating symbol value units drain-source voltage drain-gate voltage r < 1.0mohm gate-source voltage - continuous drain current - continuous (note 1) 60 v v 60 v 20 ma 115 v v v i dss dgr gss d t = 25c unless otherwise noted j 1 gs maximum ratings p - channel - q , bss84 rating symbol value units drain-source voltage drain-gate voltage r < 20kohm gate-source voltage - continuous drain current - continuous (note 1) -50 v v -50 v 20 ma 130 v v v i dss dgr gss d t = 25c unless otherwise noted j 2 gs thermal characteristics characteristic symbol units thja thermal resistance, junction to ambient (note 1) 625 value r c/w qq 12 marking code: s82 low on-resistance low gate threshold voltage fast switching complimentary pairs lead free in comply with eu rohs 2002/95/ec directives. green molding compound as per iec61249 std. . (halogen free)
ds v = 10v, i = 0.2a ds gs v = 20v, v = 0v www.panjit.com 9/15/2005 page 2 electrical characteristics - n-channel - q , 2n7002 parameter symbol min units drain-source breakdown voltage t = 25c unless otherwise noted conditions typ max bv dss d i = 10a, v = 0v zero gate voltage drain curren t i ds s v = 60v, v = 0 ds gate-body leakage 60 80 - v - - 1.0 - - 500 a - 10 na - off characteristics (note 2) i gss t =125c gs j bss8402dw j j d parameter symbol min units gate threshold voltage conditions typ max v gs(th) ds v = v , i = 250a forward transconductance 1.0 1.6 2.5 v on characteristics (note 2) g fs gs d 0.08 - - s static drain-source on-resistanc e r ds(on) gs v = 5v, i = 0.05a - 1.8 4.5 d parameter symbol min units input capacitance conditions typ max c iss reverse transfer capacitance - - 50 pf dynamic characteristics c rss - - 5.0 pf output capacitance c oss ds v = 25v, v = 0v, f = 1.0mhz - - 25 pf gs parameter symbol min units turn-on delay time conditions typ max t d(on) - - 20 ns switching characteristics turn-off delay time - - 20 ns t d(off) v =30v, i =0.2a, r =150ohm r = 25ohm, v = 10v dd d gen gen note 2. short duration test pulse used to minimize self-heating gs t =25c l 1 v = 10v, i = 0.5a gs d - 2.0 7.0 ohms 0.5 1.65 - a ds gs v = 10v, v = 7.5v on-state drain current i d(on )
ds v = -25v, i = -0.1a ds gs v = 20v, v = 0v electrical characteristics - p-channel - q , bss84 parameter symbol min units drain-source breakdown voltage t = 25c unless otherwise noted conditions typ max bv dss d i = -250a, v = 0v zero gate voltage drain curren t i ds s v = -50v, v = 0v, t =25c ds gate-body leakage -50 - - v - - -15 - - -60 a - 10 na - -0.1 -- off characteristics (note 3) i gss ds ds v = -50v, v = 0v, t =125c v = -25v, v = 0v, t =25c gs gs gs j j j j d parameter symbol min units gate threshold voltage conditions typ max v gs(th) ds v = v , i = -1ma forward transconductance -0.8 1.44 -2.0 v on characteristics (note 3) g fs gs d 0.05 - - s static drain-source on-resistanc e r ds(on) gs v = -5v, i = -0.1a - 3.8 10 ohms d parameter symbol min units input capacitance conditions typ max c iss reverse transfer capacitance - - 45 pf dynamic characteristics c rss - -12pf output capacitance c oss ds v = -25v, v = 0v, f = 1.0mhz - - 25 pf gs parameter symbol min units turn-on delay time conditions typ max t d(on) - 7.5 - ns switching characteristics turn-off delay time - 25 - ns t d(off) v = -30v, i = -0.27a, r = 50ohm, v = -10v dd d gen gs note 3. short duration test pulse used to minimize self-heating gs 2 www.panjit.com 9/15/2005 page 3 bss8402dw
0.8 0.85 0.9 0.95 1 1.05 1.1 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v gs threshold voltage (normalize d i d =250 a 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current ( a 2 5 o c v gs = 0v 0 2 4 6 8 10 24681 0 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohms ) ids=50ma ids=500ma typical characteristics curves - n-channel - q , 2n7002 t = 25c unless otherwise noted j 1 0 0.2 0.4 0.6 0.8 1 1.2 0123456 v gs - gate-to-source voltage (v) i d - drain source current ( a v ds =10v 25 o c 0 0.2 0.4 0.6 0.8 1 012345 v ds - drain-to-source voltage (v) i d - drain-source current (a ) v gs = 6v, 7v, 8v, 9v, 10v 3.0v 4.0v 5.0v 0 2 4 6 8 10 00.20.40.60.811.2 i d - drain current (a) r ds(on) - on-resistance (ohms ) v gs = 4.5v v gs =10.0v fig. 1. output characteristics fig. 2. transfer characteristics fig. 6. sourse-drain diode forward voltage fig. 5. threshold voltage vs. temperature fig. 3. on-resistance vs. drain current fig. 4. on-resistance vs. g-s voltage www.panjit.com 9/15/2005 page 4 bss8402dw
0.01 0.1 1 10 0.4 0.6 0.8 1 1.2 1.4 -v sd - source-to-drain voltage (v) -i s - source current (a) 25 o c v gs = 0v 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) v gs threshold voltage (normalize d i d =250 a 0 2 4 6 8 10 246810 -v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohms ) ids =- 50ma ids =- 500ma 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 -i d - drain current (a) r ds(on) - on-resistance (ohms ) v gs = 4.5v v gs =10.0v 0 0.2 0.4 0.6 0.8 1 01234567 -v gs - gate-to-source voltage (v) -i d - drain source current (a ) v ds =10v 25 o c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 012345 -v ds - drain-to-source voltage (v) -i d - drain-to-source current (a ) v gs = 6v, 7v, 8v, 9v, 10v 3.0v 4.0v 5.0v electrical characteristic curves - p-channel - q , bss84 t = 25c unless otherwise noted j 2 www.panjit.com 9/15/2005 page 5 fig. 1. output characteristics fig. 2. transfer characteristics fig. 6. sourse-drain diode forward voltage fig. 5. threshold voltage vs. temperature fig. 3. on-resistance vs. drain current fig. 4. on-resistance vs. g-s voltage bss8402dw
www.panjit.com 9/15/2005 page 6 ordering information bss8402dw t/r7: 7 inch reel, 3k units per reel, pin 1 towards tape sprocket holes bss8402dw t/r7-r: 7 inch reel, 3k units per reel, pin 1 away from tape sprocket holes package layout and suggested pad dimensions bss8402dw t/r13: 13 inch reel, 10k units per reel, pin 1 towards tape sprocket holes bss8402dw t/r13-r: 13 inch reel, 10k units per reel, pin 1 away from tape sprocket holes unit inch(mm) sot-363 sot-363 0.018 (0.45) 0.020 (0.50) 0.075 (1.90) 0.026 (0.65) 0.026 (0.65) unit inch(mm) bss8402dw 0 . 0 1 0 ( 0 . 2 5 ) 0 . 0 5 4 ( 1 . 3 5 ) 0 . 0 4 5 ( 1 . 1 5 ) 0 . 0 8 7 ( 2 . 2 0 ) 0 . 0 7 4 ( 1 . 9 0 ) 0 . 0 3 0 ( 0 . 7 5 ) 0 . 0 2 1 ( 0 . 5 5 ) 0 . 0 5 6 ( 1 . 4 0 ) 0 . 0 4 7 ( 1 . 2 0 ) 0 . 0 1 2 ( 0 . 3 0 ) 0 . 0 0 5 ( 0 . 1 5 ) 0 . 0 1 0 ( 0 . 2 5 ) 0 . 0 0 3 ( 0 . 0 8 ) 0 . 0 0 4 ( 0 . 1 0 ) 0 . 0 0 0 ( 0 . 0 0 )
page . 7 9/15/2005 part n o_packing code_version bss8402dw _r 1_00001 bss8402dw _r2_00001 for example : rb500v-40 _ r2 _ 00001 part no. serial number version code means hf packing size code means 13" packing type means t/r packing code xx version code xxxxx packing type 1 st code packing size code 2 nd code hf or rohs 1 st code 2 nd ~5 th code tape and ammunition box (t/b) a n/a 0 hf 0 serial number tape and reel (t/r) r 7" 1 rohs 1 serial number bulk packing (b/p) b 13" 2 tube packing (t/p) t 26mm x tape and reel (right oriented) (trr) s 52mm y tape and reel (left oriented) (trl) l panasert t/b cathode up (pbcu) u forming f panasert t/b cathode down (pbcd) d bss402dw
disclaimer z reproducing and modifying information of the document is prohibited without permission from panjit international inc.. z panjit international inc. reserves the right s to make changes of the content herein the document anytime without notific ation. please refer to our website for the latest document. z panjit international inc. disclaims any and a ll liability arising out of the application or use of any product including damages inci dentally and consequentially occurred. z panjit international inc. does not assume any and all im plied warranties, including warranties of fitness for particular pur pose, non-infringement and merchantability. z applications shown on the herein doc ument are examples of standard use and operation. customers are responsible in co mprehending the suitable use in particular applications. panjit international inc. make s no representation or warranty that such applications will be suitable for the specified us e without further testing or modification. z the products shown herein are not desi gned and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera . customers using or selli ng these products for use in such applications do so at their own risk and agree to fully indemnify panjit international inc. for any damages result ing from such improper use or sale. bss8402dw page . 8 9/15/2005
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